The BF245C is a N channel silicon field effect transistors used in high frequency applications and also in DC amplifiers. This transistors can handle the maximum frequency of 700Mhz. This symmetrical junction field transistor comes in TO-92 Plastic packaging. The BF245 transistor family includes, BF245A, BF245B and BF245C each transistors have different drain current. The BF245C is offering high drain current. Here I am sharing the Pinout, equivalent and features of BF245C transistor.
Pinout
- Pin 1 – Drain (d)
- Pin 2 – Source (s)
- Pin 3 – Gate (g)
Equivalent Transistors
If you can not find or get this transistor you can choose the equivalent transistor for replacement, which are given below,
- 2N5459 – This transistor has Similar specifications with interchangeable source/drain.
- MPF102 – It is also a general purpose N channel JFET.
- J201 – This one is a lower current version transistors, which is good for low noise applications.
- BF245B – Lower IDSS; can be used if slightly lower current is acceptable.
- 2N3819 – Another suitable alternative for high-frequency circuits.
Features
- Type: N Channel silicon field effect transistor.
- Max Drain-Source Voltage (VDS): ±30 V
- Gate-Source Cut-Off Voltage (VGS(off)): -3.2 V to -7.5 V
- Drain Current (IDSS): 12 mA to 25 mA (typical for BF245C)
- Total Power Dissipation: 300 mW
- Cut-Off Frequency: Up to 700 MHz, ideal for RF applications
- Noise Figure: 1.5 dB at 100 MHz
- Package: TO-92
- Input Capacitance: 4 pF
- Output Capacitance: 1.6 pF
Charecteristics
| Parameter | Value (Typical) |
| Max VDS | ±30 V |
| Max VGS | ±30 V |
| IDSS Range | 12 – 25 mA |
| VGS(off) Range | –3.2 to –7.5 V |
| Power Dissipation | 300 mW |
| Frequency Response | Up to 700 MHz |
Applications
- RF and VHF amplifiers.
- Audio preamps.
- Oscillator circuits.
- Analog switches.
- Mixer circuits in radios.
- Low noise signal amplification.
