33N60M2 MOSFET Pinout, Characteristics and Equivalent

33N60M2 is a 600V N Channel Mosfet used in switching applications and LLC Converters and resonant converters. MD mesh M2 technology is used in this mosfet and gate signal is protected by using Zener diodes. In this article sharing Pinout, characteristics and Equivalent MOSFETS for replacements.

Features of 33N60M2 MOSFET

33N60M2 MOSFET Available Packages

33N60M2 MOSFET available packages
33N60M2 MOSFET available package

33N60M2 Pinout

33n60m2 pinout
33n60m2 MOSFET pinout

Characteristic’s of STP33N60M2

  • Drain-source breakdown voltage (V(BR)DSS):
    • Min: 600 V
    • Condition: ID = 1 mA, VGS = 0
  • Zero gate voltage drain current (IDSS):
    • Max: 1 ยตA (at VDS = 600 V, VGS = 0)
    • Max: 100 ยตA (at VDS = 600 V, VGS = 0, Tj = 125ยฐC)
  • Gate-body leakage current (IGSS):
    • Max: ยฑ10 ยตA (at VGS = ยฑ25 V)
  • Gate threshold voltage (VGS(th)):
    • Min: 2 V
    • Typ: 3 V
    • Max: 4 V
    • Condition: VDS = VGS, ID = 250 ยตA
  • Static drain-source on-resistance (RDS(on)):
    • Typ: 0.108 ฮฉ
    • Max: 0.125 ฮฉ
    • Condition: VGS = 10 V, ID = 13 A

Equivalent MOSFET for Replacement

  • IPW60R041C6 – Infineon
  • STW40N60M2 – STMicroelectronics (same family, higher current)
  • IRFP460 – Infineon / Vishay
  • FDPF33N60 – ON Semiconductor

Applications

  • SMPS (Switch Mode Power Supply).
  • Power Factor Correction (PFC), Suitable for boost converters in PFC stages of power supplies.
  • DC-DC Converters.
  • Battery Chargers.
  • Motor Drives/Inverters.
  • LED Drivers.
  • Electronic Ballasts.
  • High voltage Switching Circuits.
  • Induction Heating Circuits.
  • Uninterruptible Power Supplies (UPS).