33N60M2 is a 600V N Channel Mosfet used in switching applications and LLC Converters and resonant converters. MD mesh M2 technology is used in this mosfet and gate signal is protected by using Zener diodes. In this article sharing Pinout, characteristics and Equivalent MOSFETS for replacements.
Features of 33N60M2 MOSFET
- Very Low gate charge (amount of charge required to switch the MOSFET ON or OFF at the gate is small).
- MOSFET has an “excellent output capacitance (Coss) profile” An “excellent Coss profile” means the MOSFET wastes less energy charging/discharging its output capacitance, switches cleaner at high frequency, and improves efficiency in modern power supplies.
- Zener diode is built internally between the gate and source terminals of the MOSFET. This will Prevents gate overvoltage damage during switching transients or ESD (electrostatic discharge).
33N60M2 MOSFET Available Packages
33N60M2 Pinout
| Pin Number | Name | Function |
|---|---|---|
| 1 | Gate (G) | Controls the MOSFET. A voltage applied here (relative to Source) turns the MOSFET ON or OFF. |
| 2 | Drain (D) | Main current path. Current flows from Drain to Source when MOSFET is ON. |
| 3 | Source (S) | Reference terminal. Current returns to Source. Often tied to ground in N channel MOSFETs. |
| Tab / Case | Drain (D) | In many packages, the back metal tab is internally connected to the Drain for heat dissipation. |
Characteristic’s of STP33N60M2
- Drain-source breakdown voltage (V(BR)DSS):
- Min: 600 V
- Condition: ID = 1 mA, VGS = 0
- Zero gate voltage drain current (IDSS):
- Max: 1 µA (at VDS = 600 V, VGS = 0)
- Max: 100 µA (at VDS = 600 V, VGS = 0, Tj = 125°C)
- Gate-body leakage current (IGSS):
- Max: ±10 µA (at VGS = ±25 V)
- Gate threshold voltage (VGS(th)):
- Min: 2 V
- Typ: 3 V
- Max: 4 V
- Condition: VDS = VGS, ID = 250 µA
- Static drain-source on-resistance (RDS(on)):
- Typ: 0.108 Ω
- Max: 0.125 Ω
- Condition: VGS = 10 V, ID = 13 A
Equivalent MOSFET for Replacement
- IPW60R041C6 – Infineon
- STW40N60M2 – STMicroelectronics (same family, higher current)
- IRFP460 – Infineon / Vishay
- FDPF33N60 – ON Semiconductor
Applications
- SMPS (Switch Mode Power Supply).
- Power Factor Correction (PFC), Suitable for boost converters in PFC stages of power supplies.
- DC-DC Converters.
- Battery Chargers.
- Motor Drives/Inverters.
- LED Drivers.
- Electronic Ballasts.
- High voltage Switching Circuits.
- Induction Heating Circuits.
- Uninterruptible Power Supplies (UPS).
