The IRFP260n is a High-power N-channel MOSFET used in various power electronics circuits. It is very popular due to its low on-resistance characteristics, High current handling capacity, and efficiency. This MOSFET also works in high voltage conditions up to 200V. Below, we will review the Pinout, specifications, and more information.
IRFP260N Pinout
Specifications of IRFP260N
| Parameter | Values |
|---|---|
| Drain – Source Voltage Vds) | 200V |
| Continuous Drain Current | 50A at 25 degrees Celsius |
| Pulsed Drain Current | 200A |
| Gate source voltage | +/- 20V |
| Power dissipation | 300W |
| Drain Source Resistance | 0.04Ohms |
| Package type | TO-247 |
Due to its Fast switching speed and Low Drain source pin resistance, the MOSFET is the perfect choice for high-frequency applications and the Class D amplifier power stage. The TO-247 packaging effectively dissipates heat, enhancing the MOSFET’s performance.
Advantage of IRFP260N
- High efficiency with low conduction loss due to low resistance
- High current carrying capacity up to 50A.
- Fast switching speed reduces the power loss and is also a better option for high-frequency operation.
- To-247 provides better thermal stability.
Applications of IRFP260N
- Switching power supplies
- DC-DC converter
- Motor control and Inverter
- High-frequency circuit making.
Conclusion
The IRFP260N is the most useful electronic component in power electronic circuits and high-frequency operating circuits. Its low internal resistance and high voltage & current operating features are the highlight. If you are going to build an Inverter circuit, class D amplifier circuit, or RF signal circuit, the Mosfet is the perfect choice.
